SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a pipe gate, a multi-layered word line formed over the pipe gate, a first channel including a first pipe channel buried in the pipe gate and a first side channel coupled to both sides of the first pipe channel to pass through the word line, a second channel including a second pipe channel buried in the pipe gate and disposed over the first pipe channel and a second side channel coupled to both sides of the second pipe channel to pass through the word line, and an insulation pattern disposed between the first pipe channel and the second pipe channel.

主权项

1. A semiconductor device comprising:
a pipe gate; a plurality of word lines vertically stacked over the pipe gate; a first channel including a first pipe channel buried in the pipe gate, and a first side channel coupled to both sides of the first pipe channel by passing through the word lines; a second channel including a second pipe channel buried in the pipe gate and disposed over the first pipe channel, and a second side channel coupled to both sides of the second pipe channel by passing through the word lines; and an insulation pattern disposed between the first pipe channel and the second pipe channel, which are vertically adjacent from each other.