CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer

摘要

A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion; forming a source region and a drain region in the substrate; forming a gate electrode in the proof mass portion; and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.