发明名称 ROW DRIVER CIRCUIT FOR OXIDE SEMI-CONDUCTOR THIN FILM TRANSISTOR
摘要 A row driver circuit for an oxide semi-conductor thin film transistor, ensuring that a pull-up circuit part (200) is in a good "off" state during an inactive period without being influenced by a high frequency clock signal (CK(n)), by means of setting two sequentially decreasing constant voltage negative potential sources (VSS1, VSS2) and low potentials of a high frequency clock signal (CK(n)) and a low frequency clock signal (LC1, LC2), thus ensuring normal operation of the circuit; furthermore, a first pull-down circuit part (400) is redesigned to avoid influence thereof on the output of a first node (Q(N)) and an output end (G(N)) during the operation period, thus ensuring normal output of the first node (Q(N)) and the output end (G(N)) without generating signal distortion.
申请公布号 WO2016061851(A1) 申请公布日期 2016.04.28
申请号 WO2014CN90286 申请日期 2014.11.05
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 DAI, CHAO
分类号 G09G3/36 主分类号 G09G3/36
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