POWER SEMICONDUCTOR MODULE WITH SHORT-CIRCUIT FAILURE MODE

摘要

A description is given of a power semiconductor module (10) which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module (10) comprises a power semiconductor (1) having metallizations (3) which form potential areas and are separated by insulations and passivations on the top side (2) of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body (4) which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body (4) is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component (5) is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body (4) has connections (6) having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections (6) are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor (1), the operating mode changes to the short-circuit failure mode with connections (6) remaining on the metal shaped body (4) in an explosion-free manner without the formation of arcs.