| 摘要 |
PROBLEM TO BE SOLVED: To form an electrode which can inhibit an increase in contact resistance due to dry etching.SOLUTION: A semiconductor device manufacturing method comprises: a lamination process of forming an electrode in which a plurality of electrode layers are laminated on a semiconductor layer; and a heat treatment process of performing a heat treatment on the electrode. The lamination process includes: a process of forming a first electrode layer consisting mainly of aluminum (Al) as one of the plurality of electrode layers; a process of forming on the first electrode layer, a second electrode layer mainly consisting of a conductive material which has a melting point higher than that of aluminum (Al) and reacts with aluminum (Al) at a temperature of 450°C and over, as one of the plurality of electrode layers; and a process of forming on the second electrode layer, a third electrode layer consisting mainly of palladium (Pd) as the farthest electrode layer from the semiconductor layer out of the plurality of electrode layers.SELECTED DRAWING: Figure 2 |
