| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminate structure having a β-GaObased film, which is low in half value width, and superior in semiconductor characteristics.SOLUTION: In a method for manufacturing a crystal laminate structure of which the half value width is 50 arcsec or less, raw material fine particles produced by pulverizing a material solution into fine particles are supplied by means of a carrier gas into a film-forming chamber, thereby forming a crystal oxide thin film including, as a primary component, a crystal oxide having a β-gallic structure on a base substrate disposed in the film-forming chamber. In forming the crystal oxide thin film, a doping process is performed using Ge or Si as a dopant. The crystal oxide thin film includes germanium or silicon, but it does not include carbon substantially.SELECTED DRAWING: None |
