发明名称 REFLECTIVE MASKS FOR USE IN EXTREME ULTRAVIOLET LITHOGRAPHY APPARATUS AND METHODS OF MANUFACTURING THE SAME
摘要 Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.
申请公布号 US2016116835(A1) 申请公布日期 2016.04.28
申请号 US201514827440 申请日期 2015.08.17
申请人 KIM Seong-sue;SEO Hwan-seok;KIM In-sung;KIM Tae-geun 发明人 KIM Seong-sue;SEO Hwan-seok;KIM In-sung;KIM Tae-geun
分类号 G03F1/24 主分类号 G03F1/24
代理机构 代理人
主权项 1. A reflective mask, comprising: a reflective multi-layer on a mask substrate; a plurality of support patterns spaced apart from one another, the support patterns being in a main trench of the reflective multi-layer,the support patterns corresponding to areas of the reflective mask not transferred onto an exposure target substrate, andthe support patterns partitioning the main trench to form a plurality of auxiliary trenches; and a light absorption pattern including a plurality of auxiliary light absorption patterns, the auxiliary light absorption patterns being in the auxiliary trenches.
地址 Seoul KR
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