发明名称 |
REFLECTIVE MASKS FOR USE IN EXTREME ULTRAVIOLET LITHOGRAPHY APPARATUS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches. |
申请公布号 |
US2016116835(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201514827440 |
申请日期 |
2015.08.17 |
申请人 |
KIM Seong-sue;SEO Hwan-seok;KIM In-sung;KIM Tae-geun |
发明人 |
KIM Seong-sue;SEO Hwan-seok;KIM In-sung;KIM Tae-geun |
分类号 |
G03F1/24 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
1. A reflective mask, comprising:
a reflective multi-layer on a mask substrate; a plurality of support patterns spaced apart from one another,
the support patterns being in a main trench of the reflective multi-layer,the support patterns corresponding to areas of the reflective mask not transferred onto an exposure target substrate, andthe support patterns partitioning the main trench to form a plurality of auxiliary trenches; and a light absorption pattern including a plurality of auxiliary light absorption patterns, the auxiliary light absorption patterns being in the auxiliary trenches. |
地址 |
Seoul KR |