METHOD FOR FABRICATING METALLIC OXIDE THIN FILM TRANSISTOR

摘要

A method for fabricating a metallic oxide thin film transistor. The method comprises the steps of: selecting a substrate (1), and fabricating a gate electrode (2) on the substrate; growing an insulation medium or a high dielectric constant medium on the substrate, and enabling the insulation medium or the high dielectric constant medium to cover the gate electrode to serve as a gate dielectric layer (3); growing a metal layer (4) on the gate dielectric layer; fabricating a channel region (5) in the middle of the metal layer; conducting anodic oxidation treatment on the metal in the channel region in a normal pressure and an indoor temperature, so as to form a metal oxide semiconductor layer; fabricating an active region comprising a source region (6), a drain region (7) and the channel region; depositing a silicon nitride layer (8) on the active region, and forming two contact holes (9, 10) of the electrode in the silicon nitride layer; and depositing a metal aluminum film, and fabricating two metal contact electrodes (11, 12) of the thin film transistor electrode, so as to complete the preparation of the metallic oxide thin film transistor. The method has a simple process and low cost and can be widely used in the field of thin film transistors.