| 摘要 |
Provided is a Hall sensor which prevents an increase in leakage current in the case where a GaAs Hall device is configured in a small-sized and thin form, in a Hall sensor having an islandless structure. The Hall sensor comprises: a GaAs Hall device (10) which includes a demagnetization unit (12) installed on a GaAs substrate (11), electrodes (13a to 13d), and a protective layer (40) installed on a surface opposite to a surface on which electrodes (13a to 13d) of the GaAs substrate (11) are installed; lead terminals (22 to 25) which are disposed around the GaAs Hall device (10); metallic thin wires (31 to 34) which electrically connect the electrodes (13a to 13d) with the lead terminals (22 to 25), respectively; and a mold member (50) which molds the above elements. A first surface, which is a surface opposite to a surface which is in contact with the metallic thin wires (31 to 34), of the protective layer (40) and the lead terminals (22 to 25) is exposed from the same surface of the mold member (50). The resistivity of the GaAs substrate (11) is equal to or higher than 5.0×10^7Ω·cm. |
