| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with improved reliability, or to provide a semiconductor device having stable characteristics, or to provide a transistor having a small current at non-conduction, or to provide a transistor having a large current at conduction, or to provide a novel semiconductor device, novel electronic equipment, and the like.SOLUTION: Provided is a semiconductor device configured by forming a first semiconductor on a substrate, forming a second semiconductor so as to be in contact with the top of the first semiconductor, forming a first layer on the second semiconductor, performing oxygen plasma processing, and then removing the first layer to expose at least a part of a surface of the second semiconductor, forming a third semiconductor so as to be in contact with the top of the second semiconductor, forming a first insulator so as to be in contact with the top of the third semiconductor, and forming a first conductor on the first insulator.SELECTED DRAWING: Figure 1 |
