| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate capable of reducing defect occurrence probability in a step for forming an epitaxial film or a semiconductor element, and to provide a semiconductor device using the substrate, and a manufacturing method of the semiconductor device.SOLUTION: In a substrate (1) having a front surface and a rear surface, which is a substrate (1) whose surface comprises a single crystal silicon carbide, a mean value of surface roughness Ra of the front surface is 0.5 nm or less, a standard deviation σ of the surface roughness Ra is 0.2 nm or less, a mean value of surface roughness Ra of the rear surface is below 0.3 nm, a warpage of the rear surface is 60 μm or less, and a diameter D of the front surface is 110 mm or more.SELECTED DRAWING: Figure 1 |
