发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of suppressing fluctuation in pressure of an air-tight chamber and reduction in bonding strength, and further, of suppressing increase in size.SOLUTION: In a semiconductor device, a first substrate 10 is bonded with a second substrate 21 and an insulating film 22, and an air-tight chamber 31 is configured to include a space between the first substrate 10 and a hollow part 20c of the second substrate 21 and the insulating film 22. In the semiconductor device, a sealing chamber 32 is configured between the second substrate 20 and the first substrate 10, and such a groove part 20d that a region bonded with one surface 20c of the second substrate 20 on one surface 10a of the first substrate 10 is not divided and that a bonding region become continuous is formed.SELECTED DRAWING: Figure 1
申请公布号 JP2016066648(A) 申请公布日期 2016.04.28
申请号 JP20140193185 申请日期 2014.09.23
申请人 DENSO CORP 发明人 TANIFUJI MASAKAZU
分类号 H01L29/84;G01L9/00;G01P15/08;G01P15/125;H01L23/02 主分类号 H01L29/84
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