| 摘要 |
The present invention pertains to a Hall element having an excellent S/N ratio. This invention is provided with a substrate (100), a first electrode (22a) and a second electrode (23a) disposed on the substrate, a third electrode (22b) disposed on the substrate at a position facing the first electrode, a fourth electrode (23b) disposed on the substrate at a position facing the second electrode, and a magneto-sensitive part (10) connected to the first to fourth electrodes. The magneto-sensitive part (10) is provided with a rectangular first magneto-sensitive region (10-1), a second magneto-sensitive region (10-2) perpendicularly intersecting the first magneto-sensitive region, and a third magneto-sensitive region (10-3) to a sixth magneto-sensitive region (10-6) formed near an intersecting region (10-0), which is a region at which the first magneto-sensitive region and the second magneto-sensitive region intersect. |
