| 摘要 |
PROBLEM TO BE SOLVED: To reduce damage or disturbance of memory cells caused by high displacement currents through a memory cell during read/write operations of a phase change memory (PCM) device.SOLUTION: A memory device 100 includes a memory cell 102, a bit-line 104, a word-line 106, a bit-line electrode 108 coupled to the bit-line, and a word-line electrode 110 coupled to the word-line. The word-line electrode has a lower potential than the bit-line electrode. Current-limiting circuitry 122 of a selection module is coupled to the word-line electrode.SELECTED DRAWING: Figure 1 |
