发明名称 |
SYSTEMS AND METHODS FOR SUPPRESSING PARASITIC PLASMA AND REDUCING WITHIN-WAFER NON-UNIFORMITY |
摘要 |
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber. |
申请公布号 |
SG10201507194V(A) |
申请公布日期 |
2016.04.28 |
申请号 |
SG10201507194V |
申请日期 |
2015.09.08 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HU KANG;ADRIEN LAVOIE;SHANKAR SWAMINATHAN;JUN QIAN;CHLOE BALDASSERONI;FRANK PASQUALE;ANDREW DUVALL;TED MINSHALL;JENNIFER PETRAGLIA;KARL LEESER;DAVID SMITH;SESHA VARADARAJAN;EDWARD AUGUSTYNIAK;DOUGLAS KEIL |
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