| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power module capable of reliably protecting a semiconductor switching element from an overcurrent by accurately detecting the overcurrent.SOLUTION: The semiconductor power module comprises a negative terminal 11b, a positive terminal 11a, and an IGBT comprising an emitter electrode connected electrically with the negative terminal 11b and a collector electrode connected electrically with the positive terminal 11a. In the semiconductor power module, an auxiliary emitter terminal 3d for detecting the potential of the emitter electrode and an auxiliary negative terminal 3f for detecting the potential of the negative terminal 11b output a self inductance Lby the negative terminal 11b, a mutual inductance Mbetween the negative terminal 11b and the positive terminal 11a; and a detection voltage corresponding to variation in a current flowing through the emitter electrode. The detection voltage is used for overcurrent protection of the IGBT, and the mutual inductance Mis used in the overcurrent protection.SELECTED DRAWING: Figure 1(a) |
