发明名称 |
SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE FILTER DEVICE |
摘要 |
In a surface acoustic wave resonator, a first IDT electrode defining a first IDT and a second IDT electrode defining a second IDT are located on a first principal surface of a piezoelectric substrate. A direction of an electric field applied to the first IDT electrode and a direction of an electric field applied to the second IDT electrode are opposite to each other with respect to a direction of a projected axis resulting from projecting a c-axis of the piezoelectric substrate to the first principal surface of the piezoelectric substrate. |
申请公布号 |
US2016118956(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201514985589 |
申请日期 |
2015.12.31 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
KIHARA Takashi;UESAKA Kenichi;NAKAGAWA Ryo |
分类号 |
H03H9/25;H03H9/64;H01L41/047;H03H9/205 |
主分类号 |
H03H9/25 |
代理机构 |
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代理人 |
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主权项 |
1. A surface acoustic wave resonator comprising:
a first terminal; a second terminal; first and second IDTs connected between the first terminal and the second terminal; a piezoelectric substrate including a first principal surface and a second principal surface opposed to the first principal surface, and having a c-axis of which direction is inclined relative to the first principal surface and the second principal surface; a first IDT electrode located on the first principal surface of the piezoelectric substrate to define the first IDT, the first IDT electrode including first and second comb-shaped electrodes; and a second IDT electrode located on the first principal surface of the piezoelectric substrate to define the second IDT, the second IDT electrode including third and fourth comb-shaped electrodes; wherein when looking at the first principal surface of the piezoelectric substrate in a plan view, a direction of an electric field applied to the first IDT and a direction of an electric field applied to the second IDT are opposite to each other with respect to a direction parallel to a projected c-axis resulting from projecting the c-axis to the first principal surface of the piezoelectric substrate. |
地址 |
Nagaokakyo-shi JP |