发明名称 |
Interconnect Structures and Methods of Forming Same |
摘要 |
Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector. |
申请公布号 |
US2016118359(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201614991426 |
申请日期 |
2016.01.08 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Wen-Hsiung;Kuo Hsuan-Ting;Yu Tsung-Yuan;Chen Hsien-Wei;Cheng Ming-Da;Liu Chung-Shi |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming an interconnect structure, the method comprising:
forming a post-passivation interconnect (PPI) over a first substrate; forming a conductive connector on the PPI; forming a molding compound over the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound; and bonding a second substrate to the conductive connector. |
地址 |
Hsin-Chu TW |