发明名称 Interconnect Structures and Methods of Forming Same
摘要 Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.
申请公布号 US2016118359(A1) 申请公布日期 2016.04.28
申请号 US201614991426 申请日期 2016.01.08
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lu Wen-Hsiung;Kuo Hsuan-Ting;Yu Tsung-Yuan;Chen Hsien-Wei;Cheng Ming-Da;Liu Chung-Shi
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of forming an interconnect structure, the method comprising: forming a post-passivation interconnect (PPI) over a first substrate; forming a conductive connector on the PPI; forming a molding compound over the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound; and bonding a second substrate to the conductive connector.
地址 Hsin-Chu TW