| 摘要 |
A substrate, on the surface of which a resist film has been formed and subjected to a pattern exposure process and a development process, is carried into a chamber and held by a holding plate therein. The surface of the substrate W held by the holding plate is irradiated with flash light from a flash lamp. This flash light has a peak within the wavelength range of 200-300 nm in the spectral distribution. In addition, the relative intensity of the flash light at a wavelength of 300 nm to the flash light at a wavelength of 500 nm is 20% or more in the spectral distribution. Since the resist film absorbs ultraviolet light, the resist film is able to be selectively heated by means of irradiation of flash light that contains a large amount of wavelength components in the ultraviolet range. |
