| 发明名称 |
HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT |
| 摘要 |
High-purity lanthanum characterized in that the purity, in terms of the purity of the lanthanum excluding any rare-earth elements and any gas components, is 5 N or higher and the number of α-ray counts is 0.001 cph/cm |
| 申请公布号 |
AU2012318023(B2) |
申请公布日期 |
2016.04.28 |
| 申请号 |
AU20120318023 |
申请日期 |
2012.09.04 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TAKAHATA, MASAHIRO;SATOH, KAZUYUKI;GOHARA, TAKESHI;NARITA, SATOYASU |
| 分类号 |
C25C3/34;C22B9/22;C22C28/00;C23C14/34 |
主分类号 |
C25C3/34 |
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