发明名称 |
CALIBRATION DEVICE AND MEMORY SYSTEM HAVING THE SAME |
摘要 |
A calibration device for use in a memory system includes a bias circuit providing bias current, and a calibration unit generating a control signal for calibration. The bias circuit includes an internal resistor and measures a second bias current generated by mirroring a first bias current through the internal resistor, and adjusts the second bias current to generate the second bias current in a predetermined range as a third bias current. The calibration unit generates the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor. |
申请公布号 |
US2016118984(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
US201514924389 |
申请日期 |
2015.10.27 |
申请人 |
SK hynix memory solutions inc. |
发明人 |
Chern Jenn-Gang;Sim Yukeun |
分类号 |
H03K19/00;G11C7/00;G05F3/26 |
主分类号 |
H03K19/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A calibration device comprising:
a bias circuit suitable for providing bias current; and a calibration unit suitable for generating a control signal for calibration, wherein the bias circuit includes an internal resistor and is suitable for measuring a second bias current generated by mirroring a first bias current through the internal resistor, and adjusting the second bias current to generate the second bias current in a predetermined range as a third bias current, and wherein the calibration unit is suitable for generating the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor. |
地址 |
San Jose CA US |