发明名称 CALIBRATION DEVICE AND MEMORY SYSTEM HAVING THE SAME
摘要 A calibration device for use in a memory system includes a bias circuit providing bias current, and a calibration unit generating a control signal for calibration. The bias circuit includes an internal resistor and measures a second bias current generated by mirroring a first bias current through the internal resistor, and adjusts the second bias current to generate the second bias current in a predetermined range as a third bias current. The calibration unit generates the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor.
申请公布号 US2016118984(A1) 申请公布日期 2016.04.28
申请号 US201514924389 申请日期 2015.10.27
申请人 SK hynix memory solutions inc. 发明人 Chern Jenn-Gang;Sim Yukeun
分类号 H03K19/00;G11C7/00;G05F3/26 主分类号 H03K19/00
代理机构 代理人
主权项 1. A calibration device comprising: a bias circuit suitable for providing bias current; and a calibration unit suitable for generating a control signal for calibration, wherein the bias circuit includes an internal resistor and is suitable for measuring a second bias current generated by mirroring a first bias current through the internal resistor, and adjusting the second bias current to generate the second bias current in a predetermined range as a third bias current, and wherein the calibration unit is suitable for generating the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor.
地址 San Jose CA US