HIGH DEFINITION HEATER AND METHOD OF OPERATION

摘要

An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.

主权项

1. An apparatus comprising:
a base functional layer comprising at least one functional zone; a substrate secured to the base functional layer; a tuning layer secured to the substrate opposite the base functional layer, the tuning layer comprising a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer providing lower power than the base functional layer; and a component secured to the tuning layer opposite the substrate, wherein the substrate defines a thermal conductivity to dissipate power from the base functional layer.