GATE INSULATING LAYER AND METHOD FOR FORMING THE SAME

摘要

The present disclosure provides A gate insulating layer comprising: a first silicon nitride film having a first thickness and a first content of N—H bonds; a second silicon nitride film having a second thickness and a second content of N—H bonds, disposed on the first silicon nitride film; and a third silicon nitride film having a third thickness and a third content of N—H bonds, disposed on the second silicon nitride film; wherein both the first thickness and the third thickness are less than the second thickness, both the N—H bonds in the first content and the third content are less than that in the second N—H bonds content, and a difference of the N—H bonds between the third content and the first content is no less than 5%. The present disclosure also provides a method for forming the above gate insulating layer.

主权项

1. A method for forming a gate insulating layer comprising:
sequentially depositing a first silicon nitride film, a second silicon nitride film and a third silicon nitride film respectively with a first power, a second power and a third power, and both the first power and the third power being less than the second power, a difference between the third power and the first power being no less than 1000 W, so as to fabricate the gate insulating layer by sequentially stacking the formed first silicon nitride film, second silicon nitride film and third silicon nitride film.