发明名称 |
CIRCUITRY FOR BIASING LIGHT SHIELDING STRUCTURES AND DEEP TRENCH ISOLATION STRUCTURES |
摘要 |
An imaging system (100) may include an image sensor die (102) stacked on top of a digital signal processor (DSP) die (104). Through-oxide vias (TOVs) (128) may be formed in the image sensor die (102) and may extend at least partially into in the DSP die (104) to facilitate communications between the image sensor die (102) and the DSP die (104). The image sensor die (102) may include light shielding structures (126) for preventing reference photodiodes (116') in the image sensor die (102) from receiving light and in-pixel grid structures (200) for preventing cross-talk between adjacent pixels (116). The light shielding structure (126) may receive a desired biasing voltage through a corresponding TOV (128), an integral plug structure (190), and/or a connection that makes contact directly with a polysilicon gate (192). The in-pixel grid (200) may have a peripheral contact (200') that receives the desired biasing voltage through a light shield (210), a conductive strap (210), a TOV (300), and/or an aluminum pad (450). |
申请公布号 |
WO2016064811(A1) |
申请公布日期 |
2016.04.28 |
申请号 |
WO2015US56371 |
申请日期 |
2015.10.20 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
BORTHAKUR, SWARNAL;SULFRRIDGE, MARC |
分类号 |
H01L27/14;H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L27/146;H04N5/369 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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