| 摘要 |
The invention relates to a method for measuring a temperature (T1, T2) using a sensor with a metal-insulator-semiconductor structure which is connected as a capacity, comprising a temperature-dependent self-discharge (112). The method comprises a step of determining a temperature information, which represents the temperature (T1, T2) of the sensor, using an electrical voltage potential (116, 118) applied at the capacitance at a measured time point (114). |
