SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, MODULE AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To enable provision of excellent electrical characteristics to a semiconductor device.SOLUTION: Plural electron diffraction patterns are observed by irradiating an oxide semiconductor film forming target face with an electron beam for which the half-value width of a probe diameter is set to 1 nm while the position of the film and the position of the electron beam are relatively moved. The plural electron diffraction patterns have 50 or more electron diffraction patterns observed at different places. The total of the occupancy ratio of first electron diffraction patterns to the 50 or more electron diffraction patterns and the occupancy ratio of second electron diffraction patterns to the 50 or more electron diffraction patterns is equal to 100%. The occupational rate of the first electron diffraction patterns is equal to 50% or more. The first electron diffraction pattern has observation points having no symmetry or plural observation points which are arranged as if a circle is drawn. The second electron diffraction pattern is an oxide semiconductor film having observation points located at the apexes of a hexagonal shape.SELECTED DRAWING: None