III-V PHOTOVOLTAIC ELEMENTS

摘要

Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1−x passivated by amorphous SiyGe1−y:H.

主权项

1. A solar cell structure comprising:
a doped III-V absorber layer; an epitaxial, intrinsic semiconductor layer adjoining the absorber layer; an emitter layer above the epitaxial, intrinsic semiconductor layer, and a transparent conductive layer above the emitter layer.