| 发明名称 |
Solid phase epitaxy of 3C-SiC on Si(001) |
| 摘要 |
A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction. |
| 申请公布号 |
US2016118465(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514872308 |
申请日期 |
2015.10.01 |
| 申请人 |
Li Connie H.;Jernigan Glenn G.;Jonker Berend T.;Goswami Ramasis;Hellberg Carl S. |
发明人 |
Li Connie H.;Jernigan Glenn G.;Jonker Berend T.;Goswami Ramasis;Hellberg Carl S. |
| 分类号 |
H01L29/16;H01L29/04;H01L21/306;H01L21/02;H01L21/324 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a SiC buffer layer on a Si substrate, comprising:
depositing an amorphous carbon layer on a Si(001) substrate; controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer; forming a deposited film; annealing the deposited film and the Si(001) substrate; and forming a SiC buffer layer on the Si(001) substrate. |
| 地址 |
Alexandria VA US |
