| 发明名称 |
APPARATUS AND METHODS FOR FORMING A MODULATION DOPED NON-PLANAR TRANSISTOR |
| 摘要 |
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap. |
| 申请公布号 |
US2016118464(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201514985282 |
申请日期 |
2015.12.30 |
| 申请人 |
Intel Corporation |
发明人 |
Pillarisetty Ravi;Hudait Mantu;Radosavljevic Marko;Rachmady Willy;Dewey Gilbert;Kavalieros Jack |
| 分类号 |
H01L29/15;H01L29/66;H01L29/06;H01L29/205;H01L29/207 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a non-planar transistor, comprising:
forming a modulation doped heterostructure comprising:
forming an active portion having a first bandgap; andforming a delta doped portion having a second bandgap, wherein forming the delta doped portion consists of forming a bottom barrier layer, forming a delta doping layer, and forming a spacer layer. |
| 地址 |
Santa Clara CA US |
