| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor using an oxide semiconductor, which has good electrical characteristics.SOLUTION: The thin-film transistor has a structure including a gate electrode 20 formed on a substrate 10, a gate insulating film 30 on the gate electrode 20, an oxide semiconductor film 40 on the gate electrode 20 and the gate insulating film 30, and a metal film 70 on the oxide semiconductor film 40. The oxide semiconductor film 40 has, at an interface with the metal film 70, a region 50 (high metal concentration region 50) having a higher metal concentration than the other regions of the oxide semiconductor film 40. In the high metal concentration region 50, a metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.SELECTED DRAWING: Figure 1 |
