| 发明名称 |
Semiconductor Structure with Active Device and Damaged Region |
| 摘要 |
A semiconductor structure is formed with an active layer having an active device including a body region. The active device is formed by top side processing in and on a top side of a semiconductor on insulator wafer. A damaged region is formed within a portion of the body region by bottom side processing at a bottom side of the semiconductor on insulator wafer, the damaged region having a structure sufficient to prevent a kink effect and self-latching in operation of the active device. |
| 申请公布号 |
US2016118406(A1) |
申请公布日期 |
2016.04.28 |
| 申请号 |
US201414521327 |
申请日期 |
2014.10.22 |
| 申请人 |
QUALCOMM SWITCH CORP. |
发明人 |
Nygaard Paul A.;Stuber Michael A. |
| 分类号 |
H01L27/12;H01L29/872;H01L29/78;H01L29/47;H01L21/3205;H01L21/84;H01L29/32;H01L29/10;H01L21/265;H01L27/06;H01L29/66 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming an active device including a body region in a semiconductor on insulator wafer by front side processing of the semiconductor on insulator wafer; and forming a damaged region within a portion of the body region by back side processing of the semiconductor on insulator wafer, the damaged region mitigating a kink effect and self-latching during operation of the active device. |
| 地址 |
San Diego CA US |
