发明名称 MEMORY WITH BIT LINE CONTROL
摘要 A memory comprises a first memory cell set coupled between a first data line and a second data line. In addition, the memory comprises a first input/output (I/O) circuit coupled to the first data line and the second data line. The first I/O circuit is also coupled to a first control line to receive a first control signal, and coupled to a first select line to receive a first select signal. The first I/O circuit selectively decouples the first data line and the second data line from the first I/O circuit during a sleep mode based on the first control signal and the first select signal.
申请公布号 KR20160045595(A) 申请公布日期 2016.04.27
申请号 KR20150143421 申请日期 2015.10.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 YANG CHEN LIN;LEE CHENG HUNG;LIAO HUNG JEN;LIN KAO CHENG;CHANG JONATHAN TSUNG YUNG;HSU YU HAO
分类号 G11C11/412;G11C11/413 主分类号 G11C11/412
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