发明名称 |
MEMORY WITH BIT LINE CONTROL |
摘要 |
A memory comprises a first memory cell set coupled between a first data line and a second data line. In addition, the memory comprises a first input/output (I/O) circuit coupled to the first data line and the second data line. The first I/O circuit is also coupled to a first control line to receive a first control signal, and coupled to a first select line to receive a first select signal. The first I/O circuit selectively decouples the first data line and the second data line from the first I/O circuit during a sleep mode based on the first control signal and the first select signal. |
申请公布号 |
KR20160045595(A) |
申请公布日期 |
2016.04.27 |
申请号 |
KR20150143421 |
申请日期 |
2015.10.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YANG CHEN LIN;LEE CHENG HUNG;LIAO HUNG JEN;LIN KAO CHENG;CHANG JONATHAN TSUNG YUNG;HSU YU HAO |
分类号 |
G11C11/412;G11C11/413 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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