Method for forming a direct aluminium bonded substrate and method for forming a power device including same

摘要

The production of a power semiconductor device involves forming a direct aluminum bonded (DAB) substrate (228) by bonding a pair of aluminum layers to a dielectric layer. A semiconductor die (266) is attached to one of the aluminum layers. An enclosure is formed around the die and substrate while exposing a specific portion of another aluminum layer for heat dissipation. An independent claim is also included for a power semiconductor device.