| 摘要 |
A photoresist composition includes a polymer with repeat units having the structure wherein each occurrence of R1 and R2 is independently hydrogen, unsubstituted or substituted C1-18 linear or branched alkyl, unsubstituted or substituted C3-18 cycloalkyl, unsubstituted or substituted C6-18 aryl, or unsubstituted or substituted C3-18 heteroaryl; and R1 and R2 are optionally covalently linked to each other to form a ring that includes —R1—C—R2—; each occurrence of Ar1, Ar2, and Ar3 is independently an unsubstituted or substituted C6-18 arylene, or unsubstituted or substituted C3-18 heteroarylene. In addition to the polymer, the photoresist composition includes a photoactive component selected from photoacid generators, photobase generators, photoinitiators, and combinations thereof. |
