发明名称 REACTOR, PLANT AND INDUSTRIAL PROCESS FOR THE CONTINUOUS PREPARATION OF HIGH-PURITY SILICON TETRACHLORIDE OR HIGH-PURITY GERMANIUM TETRACHLORIDE
摘要 The plasma reactor for cleaning silicon tetrachloride or germanium tetrachloride contaminated with hydrogen containing compounds, comprises reactor housing, high voltage supply, micro unit for plasma treatment, grounded metallic heat exchanger (4.2), dielectric (4.4), perforated plate, grid or network (4.1) and a high voltage electrode (4.3). The longitudinal axis of the dielectric, the metallic heat exchangers and the high voltage electrode are oriented parallel to one another and oriented parallel to the vector direction of the gravity force. Independent claims are included for: (1) System for production of highly pure silicon tetrachloride or highly pure germanium tetrachloride; and (2) procedure for production of highly pure silicon tetrachloride or highly pure germanium tetrachloride.
申请公布号 EP1919828(B1) 申请公布日期 2016.04.27
申请号 EP20060763520 申请日期 2006.06.06
申请人 EVONIK DEGUSSA GMBH 发明人 LANG, JÜRGEN;NICOLAI, RAINER;RAULEDER, HARTWIG
分类号 B01J19/00;B01J19/08;C01B33/107;C01G17/04 主分类号 B01J19/00
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