FABRICATING METHOD OF TRANSPARENT ELECTRODE USING MULTILAYERED THIN FILM CONSIST OF SNO2 AND ZN AND TRANSPARENT ELECTRODE THE SAME

摘要

The present invention relates to a method for fabricating a transparent electrode using a multilayered thin film consisting of tin oxide (SnO_2) and zinc (Zn) and a transparent electrode based on the same. According to the method for fabricating the transparent electrode using the multilayered thin film in which a metal and a transparent conducting oxide (TCO) are laminated in order, the fabrication is performed by the tin oxide (SnO_2) and the zinc (Zn) having a predetermined thickness being laminated by a sputtering method on a quartz substrate. The zinc (Zn) is laminated at a thickness of 5-50 nm, and a heat treatment for one to eight hours is performed at a temperature of 350-500°C after the lamination. After the heat treatment, a high level of transmittance is achieved at a light transmittance of at least 85% in a visible ray region, a specific resistance is reduced as the thickness of the zinc (Zn) increases, and p-type conduction is shown in the zinc (Zn) having a particular thickness.