| 摘要 |
A substrate processing apparatus of the present invention used in manufacturing a semiconductor device, comprises a rotation support part which supports a substrate, an etching part which discharges a processing liquid to the substrate rotated by the rotation support part and etches the surface of the substrate, and a control part which controls an etching amount by the etching part. Also, the control part controls an etching amount at each position on the surface of the substrate based on information about the characteristic of a surface process to be performed on the substrate by a post processing apparatus for performing the post processing after a substrate process by the substrate processing apparatus. So, it can be prevented that the thickness of a layer is not uniform. |
