LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided is a light emitting device. The light emitting device comprises: a first semiconductor layer of a first conductive type on a substrate; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductive type on the active layer; infiltrated metal which is dispersed in a contact region of the first semiconductor layer; and a first electrode on the contact region. The light emitting device has high reliability and can be prepared by a simple manufacturing process at low manufacturing costs.