| 摘要 |
The present technology discloses a three-dimensional non-volatile memory device where memory cells are vertically stacked. The three-dimensional non-volatile memory device according to an embodiment of the present technology is integrally and lengthwise formed so that word lines are overlapped with cell regions adjacent to each other and placed a constant distance apart from each other, and is formed with a word line contact area as the word lines between corresponding cell regions are partly etched in a stepped shape. So, a process margin of the three-dimensional non-volatile memory device can be increased by improving the structure of a word line. |
