发明名称 |
SITE SPECIFIC DEEP BRAIN STIMULATION FOR ENHANCEMENT OF MEMORY |
摘要 |
A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described. |
申请公布号 |
EP2651507(B1) |
申请公布日期 |
2016.04.27 |
申请号 |
EP20110848517 |
申请日期 |
2011.12.16 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FRIED, ITZHAK;SUTHANA, NANTHIA;KNOWLTON, BARBARA |
分类号 |
A61N1/36;A61N1/05;A61N1/20 |
主分类号 |
A61N1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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