发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device includes a dummy structure formed in the peripheral region of a substrate; insulating spacers which penetrate the dummy structure and protrude from the upper surface of the dummy structure; and first contact plugs which penetrate insulating spacers and protrude from the upper surface of the insulating spacer. So, the structure of the semiconductor device can be stable.
申请公布号 KR20160045457(A) 申请公布日期 2016.04.27
申请号 KR20140141046 申请日期 2014.10.17
申请人 SK HYNIX INC. 发明人 EOM, DAE SUNG
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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