| 摘要 |
Disclosed are methods and apparatuses for characterizing metal oxide reduction using metal oxide films formed in an annealing chamber or a plasma source. In some embodiments, a substrate including a metal seed layer is exposed to oxygen plasma so as to produce a metal oxide of the metal seed layer, and the exposure can be conducted at low temperatures and at a low pressure. In some embodiments, the substrate including the metal seed layer is exposed to oxygen at an elevated temperature in the annealing chamber. Oxidized substrates formed in such schemes are repeatable and provide uniform and stable metal oxides. The oxidized substrate may be stored for later use, and may be exposed to a reducing process of a metal from the metal oxide. In some embodiments, the exposure to the reducing process includes exposure to plasma of a kind of reduction gas. |
