SEMICONDUCTOR DEVICES HAVING GATE CORES AND A FIN ACTIVE CORE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed is a semiconductor device comprising a first cut field gate pattern and a first fin gate pattern. The first cut field gate pattern includes: an insulative first field gate core in a first area; and a conductive first cut field gate electrode in a second area. The first fin gate pattern comprises: the insulative first field gate core in the first area; and the conductive first cut field gate electrode in the second area. An upper surface of the first cut field gate core and an upper surface of the fin gate core are configured to have a co-planar surface. The purpose of the present invention is to provide a semiconductor having gate cores and a fin active core.