| 摘要 |
The invention provides a thin film transistor, a manufacturing method thereof, and a display apparatus using the same. The thin film transistor comprises a semiconducting film, a gate electrode, a source electrode, and a drain electrode. At least one of the gate electrode, the source electrode, and the drain electrode comprises a double-layer structure formed by a first electrode layer prepared by copper alloy and a second electrode layer prepared by fine copper. The copper alloy of the first electrode layer is copper filled with P and other elements. The other elements is at least one element selected from a group including Mn, Mg, Ca, Ni, Zn, Si, Al, Be, Ga, In, Fe, Ti, V, Co, Zr, and Hf. The thickness of the first electrode layer is more than 10 nm but less than 50 nm. The thickness of the second electrode layer is more than 300 nm but less than 600 nm. The range of the product between the concentration of other elements and the thickness of the first electrode layer is more than 50at.% nm but less than 400at.% nm. |
