发明名称 |
Low-voltage reference circuit |
摘要 |
A low-voltage reference circuit may have a pair of semiconductor devices. Each semiconductor device may have an n-type semiconductor region, an n+ region in the n-type semiconductor region, a metal gate, and a gate insulator interposed between the metal gate and the n-type semiconductor region through which carriers tunnel. The metal gate may have a work function matching that of p-type polysilicon. The gate insulator may have a thickness of less than about 25 angstroms. The metal gate may form a first terminal for the semiconductor device and the n+ region and n-type semiconductor region may form a second terminal for the semiconductor device. The second terminals may be coupled to ground. A biasing circuit may use the first terminals to supply different currents to the semiconductor devices and may provide a corresponding reference output voltage at a value that is less than one volt. |
申请公布号 |
EP2500793(B1) |
申请公布日期 |
2016.04.27 |
申请号 |
EP20120159279 |
申请日期 |
2012.03.13 |
申请人 |
ALTERA CORPORATION |
发明人 |
RATNAKUMAR, ALBERT;XIANG, QI;MAANGAT, SIMARDEEP;LIU, JUN |
分类号 |
G05F3/30 |
主分类号 |
G05F3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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