发明名称 ウェーハの加工方法
摘要 <P>PROBLEM TO BE SOLVED: To prevent a chamfered outer peripheral edge from being chipped when grinding a wafer of a bonded wafer. <P>SOLUTION: An outer peripheral edge 13 of a surface 10a of a wafer 10 is removed to a depth not reaching a back surface 10b, and a residual portion 14 is left on the side of the back surface 10b (outer peripheral removal step). Then, a bonded wafer 1 is formed by sticking the surface 10a of the wafer 10 onto a support wafer 20 (bonded wafer formation step), then the residual portion 14 is removed with a cutting blade 37 (residual portion removal step), and thereafter, the back surface 10b of the wafer is ground or polished and thinned to a prescribed thickness (thinning step). By performing thinning in the state without a chamfered outer peripheral edge 14, chipping of the outer peripheral edge 14 is prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5912310(B2) 申请公布日期 2016.04.27
申请号 JP20110140162 申请日期 2011.06.24
申请人 株式会社ディスコ 发明人 堤 義弘
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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