| 摘要 |
<P>PROBLEM TO BE SOLVED: To form trench structures having different depth in a semiconductor layer composed of SiC in the same process. <P>SOLUTION: A present manufacturing method is a manufacturing method of a semiconductor device having a configuration in which trenches having different depths are formed in a semiconductor layer composed of a silicon carbide (SiC) single crystal. The manufacturing method comprises the steps of: forming an amorphous layer in the semiconductor layer; and forming the trenches by wet etching the amorphous layer. The manufacturing method uses irradiation of light (laser beams) for forming the amorphous layer. On the semiconductor layer, absorption layers absorbing light are formed by patterning. Depths of the amorphous layers (trenches) are defined by pattern widths of the absorption layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
