| 摘要 |
The present invention provides: 1-fluorobutane having a purity of 99.9% by volume or more and a total butene content of 1,000 ppm by volume or less; use of the 1-fluorobutane as a dry etching gas; and a plasma etching method using the 1-fluorobutane as an etching gas. According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided. |
