| 摘要 |
An embodiment of the present invention provides a thin film transistor substrate. The thin film transistor substrate includes gate wiring, data wiring intersecting with the gate wiring, and a common electrode wiring in parallel to the gate wiring at least in a part. A thin film transistor is arranged in a region where the gate wiring and the data wiring intersect with each other. The gate wiring and the common electrode wiring have a connection region for providing normal electrical connection at a time of a short-circuit failure between the gate wiring and the data wiring and a cutting region where the gate wiring and the common electrode wiring are cut, respectively. A part of the common electrode wiring can be used for data wiring defect repair via the connection region and the cutting region. Accordingly, the repaired thin film transistor substrate can be provided even when a data wiring defect occurs, and thus a process manufacturing yield can be improved. |
