| 摘要 |
PROBLEM TO BE SOLVED: To provide constitution of a photoelectric conversion device such that a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on one surface of a silicon substrate can be effectively separated.SOLUTION: A photoelectric conversion device 1 includes a silicon substrate 10, a first conductivity type semiconductor layer 14 and a second conductivity type semiconductor layer 15 which are formed on one surface of the silicon substrate 10 and have mutually opposite conductivity types, and an insulation layer 13 which is formed on the one surface of the silicon substrate 10, and insulates the first conductivity type semiconductor layer 14 and second conductivity type semiconductor layer 15. The first conductivity type semiconductor layer 14 and second conductivity type semiconductor layer 15 adjoin each other with the insulation layer 13 interposed in an in-plane direction of the silicon substrate 10. Neither the first conductivity type semiconductor layer 14 nor the second conductivity type semiconductor layer 15 is formed between the silicon substrate 10 and insulation layer 13. |
